Tokyo, Japan

Kohei Sasaki

This inventor holds 37 USPTO granted patents and 16 published patent applications and 15 EPO patents, primarily in Ga2O3 Semiconductors. Top assignees: Tamura Corporation, Novel Crystal Technology, Inc., National Institute of Information and Communications Technology, Incorporated. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kohei Sasaki. Retrieved from https://idiyas.com/inventor/kohei-sasaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 37 

% Patents Active = 91.9

 

Average Co-Inventor Count = 1.8

ph-index = 5

Forward Citations = 71(Granted Patents)


Location History:

  • Sayama, JP (2021 - 2022)
  • Tokyo, JP (2015 - 2024)
  • Saitama, JP (2022 - 2024)

Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Ga2O3 Semiconductor
Single Crystal Film
Schottky Diode
Field Effect Transistor
Crystalline Layered Structure
Epitaxial Growth
Trench MOS Diode
High Voltage Diode
Semiconductor Substrate
Dopant Gas
Beta-GaO
37 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Kohei Sasaki in Semiconductor Technology

Introduction

Kohei Sasaki, a prominent inventor based in Tokyo, Japan, has made significant advancements in semiconductor technology, particularly through his innovative methods in the manufacturing of beta-GaO-based single crystal films. With 34 patents to his name, his research has paved the way for improved semiconductor substrates, which are essential for various electronic applications.

Latest Patents

Among his latest innovations, Sasaki developed a method for manufacturing a beta-GaO-based single crystal film. This method involves an intricate process of gas flow within a reaction chamber of a hydride vapor phase epitaxy (HVPE) apparatus. The unique configuration ensures optimal positioning of gas inlets for dopant gas and other elements, enhancing the growth of high-quality semiconductor films. Additionally, his patent for a GaO-based single crystal substrate boasts the ability to achieve a high processing yield, with a remarkably low crack density of less than 0.05 cracks/cm, thereby significantly improving the reliability of semiconductor components.

Career Highlights

Sasaki's career includes key roles at Tamura Corporation and Novel Crystal Technology, Inc., where he played a critical role in the development and implementation of cutting-edge semiconductor technologies. His extensive experience in the field has not only contributed to his personal accolades but has also propelled the advancements in the semiconductor industry.

Collaborations

Throughout his career, Kohei Sasaki has collaborated with notable figures, including Masataka Higashiwaki and Minoru Fujita. These partnerships have fostered a rich exchange of ideas and innovations, further enhancing the impact of their collective research on semiconductor technologies.

Conclusion

Kohei Sasaki's contributions to the semiconductor industry through his innovative patents and collaborative efforts highlight his status as a leading inventor in the field. His work continues to shape the future of semiconductor manufacturing, making significant strides towards more efficient and reliable technology. The impact of his inventions will likely resonate within the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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