The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Mar. 11, 2019
Tdk Corporation, Tokyo, JP;
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Jun Arima, Tokyo, JP;
Minoru Fujita, Tokyo, JP;
Jun Hirabayashi, Tokyo, JP;
Kohei Sasaki, Saitama, JP;
TDK CORPORATION, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
NOVEL CRYSTAL TECHNOLOGY, INC., Saitama, JP;
Abstract
An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substratemade of gallium oxide, a drift layermade of gallium oxide and provided on the semiconductor substrate, an anode electrodebrought into Schottky contact with the drift layer, and a cathode electrodebrought into ohmic contact with the semiconductor substrate. The drift layerhas an outer peripheral trenchthat surrounds the anode electrodein a plan view, and the outer peripheral trenchis filled with a semiconductor materialhaving a conductivity type opposite to that of the drift layer. An electric field is dispersed by the presence of the thus configured outer peripheral trench. This alleviates electric field concentration on the corner of the anode electrode, making it less apt to cause dielectric breakdown.