Tokyo, Japan

Jun Hirabayashi

This inventor holds 22 USPTO granted patents and 13 published patent applications and 7 EPO patents, primarily in Semiconductor Technology. Top assignees: Tdk Corporation, Novel Crystal Technology, Inc., Tamura Corporation. Active years: 2001-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Hirabayashi. Retrieved from https://idiyas.com/inventor/jun-hirabayashi-t5zkhdie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 95.5

 

Average Co-Inventor Count = 4.2

ph-index = 3

Forward Citations = 22(Granted Patents)


Location History:

  • Chiba, JP (2001 - 2003)
  • Tokyo, JP (2004 - 2024)

Company Filing History:


Years Active: 2001-2026

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Areas of Expertise:
Schottky Barrier Diode
Single-Crystal Production
Crystal Manufacturing
Thermal Head
Trench MOS Diode
Current Sensor
Semiconductor Device
EFG-Based Growth
22 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Jun Hirabayashi in the Field of Single-Crystal Technologies

Introduction

Jun Hirabayashi, a prominent inventor based in Tokyo, Japan, holds an impressive portfolio of 18 patents. His inventive works primarily focus on technologies related to single-crystal production and semiconductor devices. His innovative spirit and dedication to advancing industry standards have positioned him as a key figure in the field.

Latest Patents

Among his latest contributions, two significant patents stand out: the single-crystal growing crucible and the Schottky barrier diode. The single-crystal growing crucible is designed with a unique side wall section that provides circumferential length redundancy during the cooling process, thus ensuring the effective solidification of the raw material melt. This innovative design promotes better quality single-crystal growth.

Additionally, the Schottky barrier diode developed by Hirabayashi features advancements in semiconductor technology, utilizing a gallium oxide substrate. This diode includes a drift layer and strategically placed anode and cathode electrodes that enhance performance while mitigating electric field concentration. These patents reflect Hirabayashi's commitment to pushing the boundaries of modern technology.

Career Highlights

Throughout his career, Jun Hirabayashi has worked with notable companies, including TDK Corporation and Tamura Corporation. His experience in these esteemed organizations has contributed significantly to his expertise and the development of his innovative solutions.

Collaborations

Hirabayashi has collaborated with several esteemed professionals in his field, including Minoru Fujita and Jun Arima. These partnerships have facilitated a dynamic exchange of ideas, further enhancing the scope and impact of his inventions.

Conclusion

Jun Hirabayashi's contributions to the field of single-crystal technology and semiconductor development are notable exemplars of innovation. With a solid foundation of patents and valuable collaborations, he continues to make strides that significantly impact the industry. His work inspires future inventors and highlights the importance of continued research and development in advanced technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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