The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jan. 28, 2022
Tdk Corporation, Tokyo, JP;
Jun Arima, Tokyo, JP;
Minoru Fujita, Tokyo, JP;
Katsumi Kawasaki, Tokyo, JP;
Jun Hirabayashi, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A width Wof an outer peripheral trench formed in the drift layer is larger than a width Wof a center trench. An outer peripheral wall Sof the outer peripheral trench is curved so as to approach vertical toward the outside, while an inner peripheral wall Sthereof is closer to vertical than the outer peripheral wall S. This relaxes an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.