The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Aug. 30, 2018
Tdk Corporation, Tokyo, JP;
Jun Arima, Tokyo, JP;
Jun Hirabayashi, Tokyo, JP;
Minoru Fujita, Tokyo, JP;
Katsumi Kawasaki, Tokyo, JP;
Daisuke Inokuchi, Tokyo, JP;
TDK CORPORATION, Tokyo, JP;
Abstract
An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substratemade of gallium oxide, a drift layermade of gallium oxide and provided on the semiconductor substrate, an anode electrodebrought into Schottky contact with the drift layer, and a cathode electrodebrought into ohmic contact with the semiconductor substrate. The drift layerhas an outer peripheral trenchformed at a position surrounding the anode electrodein a plan view. An electric field is dispersed by the presence of the outer peripheral trenchformed in the drift layer. This alleviates concentration of the electric field on the corner of the anode electrode, making it unlikely to cause dielectric breakdown.