The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Oct. 09, 2019
Tdk Corporation, Tokyo, JP;
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Jun Arima, Tokyo, JP;
Minoru Fujita, Tokyo, JP;
Jun Hirabayashi, Tokyo, JP;
Kohei Sasaki, Saitama, JP;
TDK CORPORATION, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
NOVEL CRYSTAL TECHNOLOGY, INC., Saitama, JP;
Abstract
An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrodebrought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.