The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Feb. 25, 2019
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Tdk Corporation, Tokyo, JP;
Kohei Sasaki, Saitama, JP;
Minoru Fujita, Tokyo, JP;
Jun Hirabayashi, Tokyo, JP;
Jun Arima, Tokyo, JP;
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
TDK Corporation, Tokyo, JP;
Abstract
A trench MOS Schottky diode includes a first semiconductor layer including a GaO-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a GaO-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 μm in a region including the inner surface of the trench.