The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Jun. 12, 2018
Applicants:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Inventors:
Kohei Sasaki, Saitama, JP;
Daiki Wakimoto, Saitama, JP;
Yuki Koishikawa, Saitama, JP;
Quang Tu Thieu, Saitama, JP;
Assignees:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/24 (2006.01); H01L 29/47 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8725 (2013.01); H01L 29/24 (2013.01); H01L 29/47 (2013.01); H01L 29/7802 (2013.01);
Abstract
A Schottky barrier diode includes a semiconductor layer including a GaO-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.