The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Feb. 08, 2023
Applicants:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Inventor:
Kohei Sasaki, Saitama, JP;
Assignees:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/1095 (2013.01); H01L 29/24 (2013.01); H01L 29/41741 (2013.01); H01L 29/8083 (2013.01);
Abstract
A field-effect transistor includes an n-type semiconductor layer that includes a GaO-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.