The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Apr. 26, 2018
Applicants:
National Institute of Information and Communications Technology, Tokyo, JP;
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Inventors:
Masataka Higashiwaki, Tokyo, JP;
Yoshiaki Nakata, Tokyo, JP;
Takafumi Kamimura, Tokyo, JP;
Man Hoi Wong, Tokyo, JP;
Kohei Sasaki, Saitama, JP;
Daiki Wakimoto, Saitama, JP;
Assignees:
National Institute of Information and Communications Technology, Tokyo, JP;
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc, Saitama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/812 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/0619 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01);
Abstract
A GaO-based semiconductor device includes a GaO-based crystal layer including a donor, and an N-doped region formed in at least a part of the GaO-based crystal layer.