The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Aug. 06, 2015
Applicants:
Tamura Corporation, Tokyo, JP;
National Institute of Information and Communications Technology, Koganei, JP;
Inventors:
Assignees:
Tamura Corporation, Tokyo, JP;
National Institute of Information and Communications Technology, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 30/87 (2025.01); H10D 62/10 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/027 (2025.01); H10D 30/60 (2025.01); H10D 30/6725 (2025.01); H10D 30/87 (2025.01); H10D 30/875 (2025.01); H10D 62/113 (2025.01); H10D 62/80 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H10D 62/405 (2025.01); H10P 14/2918 (2026.01); H10P 14/2926 (2026.01); H10P 14/3434 (2026.01); H10P 14/3466 (2026.01);
Abstract
A semiconductor element includes a high-resistivity substrate that includes a β-GaO-based single crystal including an acceptor impurity, an undoped β-GaO-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped β-GaO-based single crystal layer. The undoped β-GaO-based single crystal layer includes an element isolation region.