The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Sep. 10, 2021
Tamura Corporation, Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Ken Goto, Tokyo, JP;
Kohei Sasaki, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Yoshinao Kumagai, Tokyo, JP;
Hisashi Murakami, Tokyo, JP;
Tamura Corporation, Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Abstract
As one embodiment, the present invention provides a method for growing a β-GaO-based single crystal film by using HYPE method. The method includes a step of exposing a GaO-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-GaO-based single crystal film on a principal surface of the GaO-based substrate at a growth temperature of not lower than 900° C.