Tokyo University of Agriculture and Technology

Tamura Corporation

Mitsui Coke Co. Ltd.

Mitsubishi Chemical Corporation

National Institute of Information and Communications Technology, Incorporated

Taiyo Nippon Sanso Corporation

Mitsui Mining Co., Ltd.

Stanley Electric Co., Ltd

Soraa, Inc.

Tokyo Corporation

University of Agriculture and Technology

National University Corporation Tokyo University of Agriculture and Technology

Hisashi Murakami

Akinori Koukitu

Yoshinao Kumagai

Ken Goto

Kohei Sasaki

Kenji Fukuda

Toshikatsu Ohtsubo

Masataka Higashiwaki

Kenji Iso

Noriaki Ohnishi

Michael Ragan Krames

Mark Philip D'Evelyn

Akira Yamaguchi

Toru Kinoshita

Man Hoi Wong

Kazushige Shiina

Hidehiko Sugimura

Hayato Shimamura

As one embodiment, the present invention provides a method for growing a β-GaO-based single crystal film by using HYPE method. The method includes a step of exposing a GaO-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-GaO-based single crystal film on a principal surface of the GaO-based substrate at a growth temperature of not lower than 900° C.

Method for growing beta-GaO-based single crystal film, and crystalline layered structure

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

Vapor-liquid reaction device, reaction tube, film forming apparatus

A method for producing a GaN crystal that includes: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaCland NHas raw materials.

Method for producing GaN crystal

[Problem] To provide a crystal laminate structure having a &#x3b2;-GaObased single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structurewhich includes: a GaObased substrate; and a &#x3b2;-GaObased single crystal filmformed by epitaxial crystal growth on a primary faceof the GaObased substrateand including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1&#xd7;10to 5.0&#xd7;10atoms/cm.

Crystal laminate structure

A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a &#x3b2;-GaO-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the &#x3b2;-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a &#x3b2;-GaO-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a &#x3b2;-GaO-based single crystal on a semiconductor substrate that includes a &#x3b2;-GaO-based single crystal and has a principal plane parallel to a [100] axis of the &#x3b2;-GaO-based single crystal.

Semiconductor substrate, and epitaxial wafer and method for producing same

The present invention provides a novel method for producing a GaN crystal, the method including growing GaN from vapor phase on a semi-polar or non-polar GaN surface using GaCland NHas raw materials. Provided herein is an invention of a method for producing a GaN crystal, including the steps of: (i) preparing a GaN seed crystal having a non-polar or semi-polar surface whose normal direction forms an angle of 85&#xb0; or more and less than 170&#xb0; with a [0001] direction of the GaN seed crystal; and (ii) growing GaN from vapor phase on a surface including the non-polar or semi-polar surface of the GaN seed crystal using GaCland NHas raw materials.

A semiconductor element includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a channel layer on the buffer layer, the channel layer including a &#x3b2;-GaO-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a &#x3b2;-GaO-based single crystal including a donor impurity.

Semiconductor element and crystalline laminate structure

A group III nitride laminate having monocrystalline n-type AlGaN (0.7&#x2264;X&#x2264;1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlGa)O(0.0&#x2264;Y&#x3c;0.3) is provided between the monocrystalline n-type AlGaN (0.7&#x2264;X&#x2264;1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.

Group III nitride laminate and vertical semiconductor device having the laminate

A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a &#x3b2;-GaO-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the &#x3b2;-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a &#x3b2;-GaO-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer

A crystal laminate structure includes a GaO-based substrate, and a &#x3b2;-GaO-based single crystal film formed by epitaxial crystal growth on a principal surface of the GaO-based substrate. The &#x3b2;-GaO-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1&#xd7;10atoms/cmand not more than 5.0&#xd7;10atoms/cm.

A high withstand voltage Schottky barrier diode includes a first layer that includes a first GaO-based single crystal including a first Group IV element and Cl at a concentration of not more than 5&#xd7;10cmand that has an effective donor concentration of not less than 1&#xd7;10and not more than 6.0&#xd7;10cm, a second layer that includes a second GaO-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.

High voltage withstand Ga2O3-based single crystal schottky barrier diode

A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1&#xd7;10/cmor lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0&#xd7;10atm or higher onto the substrate, and growing a GaN crystal in the &#x2212;C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200&#xb0; C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0&#xd7;10atm or higher onto the substrate, and growing an AlN crystal in the &#x2212;C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400&#xb0; C. or higher.

Nitride semiconductor crystal, manufacturing method and manufacturing equipment

InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

Indium gallium nitride light emitting devices

Coal is dissolved in a hydrocarbon solvent, heated and purged of insolubles to form various types of solvent purified coal having different degrees of depolymerization. These various types of solvent purified coal are then coked to yield a variety of green coke products. The solvent purified coal is useful as a raw material for needle-like green coke when the value of its (N+O+S)/C atomic ratio is less than 0.0445; for coarse mosaic green coke when the value is in the range of from 0.0445 to but excluding 0.0516; for mosaic green coke when the value is in the range of from 0.0516 to but excluding 0.0584; for fine mosaic green coke when the value is in the range of from 0.0584 to but excluding 0.0645; and for glassy green coke when the value is equal to or greater than 0.0645.

Preparation of carbonaceous products

A process is disclosed for the production of solvent-refined coal useful as a starting material for micromosaic carbonaceous products and having an O/C atomic ratio of 0.040 to &lt;0.046, or useful as a starting material for coarse mosaic carbonaceous products and having an O/C atomic ratio of 0.030 to &lt;0.040 or useful as a starting material for needle like carbonaceous products and having an O/C atomic ratio of less than 0.030. The process comprises dissolving in a hydrocarbon solvent a coal intrinsically having an O/C atomic ratio of 0.030 to &lt;0.055 or a coal pretreated with a solvent, under hydrogen pressure, so as to have an O/C atomic ratio of 0.030 to &lt;0.055, and heating the resultant coal solution under a pressure of hydrogen for a period of time sufficient to form said solvent-refined coal.

Growing community of inventors

Tokyo, Japan

Hisashi Murakami