The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Nov. 16, 2016
Tamura Corporation, Tokyo, JP;
National Unversity Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Tamura Corporation, Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Abstract
A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a β-GaO-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the β-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a β-GaO-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a β-GaO-based single crystal on a semiconductor substrate that includes a β-GaO-based single crystal and has a principal plane parallel to a [100] axis of the β-GaO-based single crystal.