The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Aug. 18, 2015
Tamura Corporation, Tokyo, JP;
National Institute of Information and Communications Technology, Koganei, JP;
National University Corporation Tokyo University of Agriculture and Technology, Fuchu, JP;
Kohei Sasaki, Tokyo, JP;
Ken Goto, Tokyo, JP;
Masataka Higashiwaki, Koganei, JP;
Man Hoi Wong, Koganei, JP;
Akinori Koukitu, Fuchu, JP;
Yoshinao Kumagai, Fuchu, JP;
Hisashi Murakami, Fuchu, JP;
TAMURA CORPORATION, Tokyo, JP;
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Koganei, JP;
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, Fuchu, JP;
Abstract
A semiconductor element includes a high-resistivity substrate that includes a β-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-GaO-based single crystal, and a channel layer on the buffer layer, the channel layer including a β-GaO-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a β-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-GaO-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a β-GaO-based single crystal including a donor impurity.