The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Dec. 03, 2019
Tamura Corporation, Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Ken Goto, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Yoshinao Kumagai, Tokyo, JP;
Hisashi Murakami, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, Tokyo, JP;
Abstract
[Problem] To provide a crystal laminate structure having a β-GaObased single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structurewhich includes: a GaObased substrate; and a β-GaObased single crystal filmformed by epitaxial crystal growth on a primary faceof the GaObased substrateand including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×10to 5.0×10atoms/cm.