The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Mar. 08, 2016
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
National University Corporation Tokyo, Tokyo, JP;
University of Agriculture and Technology, Tokyo, JP;
Abstract
A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1×10/cmor lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0×10atm or higher onto the substrate, and growing a GaN crystal in the −C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200° C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0×10atm or higher onto the substrate, and growing an AlN crystal in the −C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400° C. or higher.