logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9281180 B1

PDFFull Text
Date of Patent:
Mar. 08, 2016

Filed:

May. 11, 2011

Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal

Applicants:

Akinori Koukitu, Tokyo, JP;

Yoshinao Kumagai, Tokyo, JP;

Inventors:

Akinori Koukitu, Tokyo, JP;

Yoshinao Kumagai, Tokyo, JP;

Assignee:

National University Corporation Tokyo University of Agriculture, Tokyo, JP;

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Matthew Landau

Assistant Examiner:

Eric Ashbahian

Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/448 (2006.01); C30B 25/00 (2006.01); C30B 29/40 (2006.01); C30B 35/00 (2006.01); C30B 25/14 (2006.01); C01G 15/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02107 (2013.01); C23C 16/303 (2013.01); C23C 16/4488 (2013.01); C30B 25/00 (2013.01); C30B 25/14 (2013.01); C30B 29/403 (2013.01); C30B 35/007 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); C01G 15/00 (2013.01);
Abstract

According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.

Find Patent Forward Citations

Koukitu, Akinori. (2016). Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal (U.S. Patent No. 9281180). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9281180

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…