The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Jun. 10, 2014
Tokuyama Corporation, Shunan-shi, Yamaguchi, JP;
Akinori Koukitsu, Fuchu, JP;
Yoshinao Kumagai, Fuchu, JP;
Toru Nagashima, Shunan, JP;
Reiko Okayama, Shunan, JP;
TOKUYAMA CORPORATION, Shunan-shi, Yamaguchi, JP;
Abstract
The method for manufacturing an aluminum-based group III nitride single crystal includes the step of supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0:/()  (1)(In the formula (1), Vrepresents a supply of the halogen-based gas; and Vrepresents a supply of the aluminum halide gas); and a growth rate of the aluminum-based group III nitride single crystal is no less than 10 μm/h.