Tokyo University of Agriculture and Technology

Tamura Corporation

Tokuyama Corporation

Sumitomo Electric Industries, Limited

Tokyo Electron Limited

National Institute of Information and Communications Technology, Incorporated

Rohm Co., Ltd.

Stanley Electric Co., Ltd

Soraa, Inc.

Hexatech, Inc.

Tokyo Corporation

University of Agriculture and Technology

Tokyo University Agriculture and Technology Tlo Co., Ltd.

Yoshinao Kumagai

Akinori Koukitu

Hisashi Murakami

Ken Goto

Toru Nagashima

Kohei Sasaki

Yoshiki Miura

Fumitaka Sato

Kazuya Takada

Toru Kinoshita

Hiroyuki Yanagi

Masataka Higashiwaki

Kikurou Takemoto

Michael Ragan Krames

Mark Philip D'Evelyn

Seiji Nakahata

Jinqiao Xie

Song Yun Kang

Raoul Schlesser

Zlatko Sitar

Rafael F Dalmau

Naoki Yoshii

Baxter F Moody

Tetsuo Fujii

Man Hoi Wong

Reiko Okayama

Akinori Koukitsu

Yuki Hiraren

Tomohiro Marui

Yuki Kubota

As one embodiment, the present invention provides a method for growing a β-GaO-based single crystal film by using HYPE method. The method includes a step of exposing a GaO-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-GaO-based single crystal film on a principal surface of the GaO-based substrate at a growth temperature of not lower than 900° C.

Method for growing beta-GaO-based single crystal film, and crystalline layered structure

[Problem] To provide a crystal laminate structure having a &#x3b2;-GaObased single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structurewhich includes: a GaObased substrate; and a &#x3b2;-GaObased single crystal filmformed by epitaxial crystal growth on a primary faceof the GaObased substrateand including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1&#xd7;10to 5.0&#xd7;10atoms/cm.

Crystal laminate structure

A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a &#x3b2;-GaO-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the &#x3b2;-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a &#x3b2;-GaO-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a &#x3b2;-GaO-based single crystal on a semiconductor substrate that includes a &#x3b2;-GaO-based single crystal and has a principal plane parallel to a [100] axis of the &#x3b2;-GaO-based single crystal.

Semiconductor substrate, and epitaxial wafer and method for producing same

A semiconductor element includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a channel layer on the buffer layer, the channel layer including a &#x3b2;-GaO-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a &#x3b2;-GaO-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a &#x3b2;-GaO-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a &#x3b2;-GaO-based single crystal including a donor impurity.

Semiconductor element and crystalline laminate structure

A group III nitride laminate having monocrystalline n-type AlGaN (0.7&#x2264;X&#x2264;1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlGa)O(0.0&#x2264;Y&#x3c;0.3) is provided between the monocrystalline n-type AlGaN (0.7&#x2264;X&#x2264;1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.

Group III nitride laminate and vertical semiconductor device having the laminate

A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a &#x3b2;-GaO-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the &#x3b2;-GaO-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a &#x3b2;-GaO-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer

A crystal laminate structure includes a GaO-based substrate, and a &#x3b2;-GaO-based single crystal film formed by epitaxial crystal growth on a principal surface of the GaO-based substrate. The &#x3b2;-GaO-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1&#xd7;10atoms/cmand not more than 5.0&#xd7;10atoms/cm.

A high withstand voltage Schottky barrier diode includes a first layer that includes a first GaO-based single crystal including a first Group IV element and Cl at a concentration of not more than 5&#xd7;10cmand that has an effective donor concentration of not less than 1&#xd7;10and not more than 6.0&#xd7;10cm, a second layer that includes a second GaO-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.

High voltage withstand Ga2O3-based single crystal schottky barrier diode

A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1&#xd7;10/cmor lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0&#xd7;10atm or higher onto the substrate, and growing a GaN crystal in the &#x2212;C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200&#xb0; C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0&#xd7;10atm or higher onto the substrate, and growing an AlN crystal in the &#x2212;C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400&#xb0; C. or higher.

Nitride semiconductor crystal, manufacturing method and manufacturing equipment

InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

Indium gallium nitride light emitting devices

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200&#xb0; C.

Highly transparent aluminum nitride single crystalline layers and devices made therefrom

The method for manufacturing an aluminum-based group III nitride single crystal includes the step of supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0:/()&#x2003;&#x2003;(1)(In the formula (1), Vrepresents a supply of the halogen-based gas; and Vrepresents a supply of the aluminum halide gas); and a growth rate of the aluminum-based group III nitride single crystal is no less than 10 &#x3bc;m/h.

Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy

The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1&#xd7;10atoms/cmor more and less than 3&#xd7;10atoms/cm, a chlorine concentration is 1&#xd7;10to 1&#xd7;10atoms/cm, and an absorption coefficient at 265 nm wavelength is 40 cmor less.

Single-cystalline aluminum nitride substrate and a manufacturing method thereof

A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part Rand supplying oxygen gas from a third gas supply source (oxygen gas supply source) Ginto a reaction container, controlling heating units (heaters H, Hand H) with a control device CONT such that temperature Tof the first raw material storing part R, temperature Tof a second raw material storing part Rand temperature Tof the installation base on which the substrate is disposed satisfy a relationship of T&#x3c;T&#x3c;T. Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.

ZnO film production system and production method using ZnO film production system having heating units and control device

According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.

Growing community of inventors

Tokyo, Japan

Yoshinao Kumagai