Yasuo Ohno

Title: The Innovative Mind of Yasuo Ohno

Introduction: Yasuo Ohno, an accomplished inventor based in Tokyo, Japan, has made substantial contributions to the field of semiconductor devices. With a remarkable portfolio of 18 patents, Ohno's work reflects a deep commitment to advancing technology and improving electronic performance.

Latest Patents: Among his most recent innovations is a groundbreaking patent for a group III nitride semiconductor device of the field effect transistor type, which focuses on reducing parasitic capacitances. This design introduces an intermediate layer within the hetero-junction field effect transistor that comprises an n-type-impurity doped layer positioned between the electron supply layer and the n-type cap layer. By employing this intermediate layer, the polarized negative charge generated between the electron supply layer and the n-type cap layer is canceled out, significantly decreasing the barrier against electrons and reducing source/drain resistance.

Career Highlights: Ohno's career is marked by his tenure at distinguished companies such as NEC Corporation and Oki Electric Industry Co., Ltd. His experience in these organizations has enabled him to refine his skills and innovate effectively within the realm of semiconductor technology.

Collaborations: Throughout his impressive career, Yasuo Ohno has collaborated with notable professionals, including Yuji Takahashi and Kazuaki Kunihiro. These partnerships have further enriched his work and contributed to the development of cutting-edge semiconductor technologies.

Conclusion: Yasuo Ohno stands out as a prominent inventor in the technology sector, with his innovative patents paving the way for advancements in semiconductor devices. His dedication to his craft and ability to collaborate with other skilled professionals have established him as a leading figure in his field, propelling the future of electronic technology forward.