The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Sep. 30, 1997
Applicant:
Inventor:
Yasuo Ohno, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ;
Abstract
A p-type layer which is not depleted is inserted in a position at a depth relative to a lower surface of a gate electrode that is less than three times the distance between a lower surface of a gate electrode and a channel layer. A drain voltage at which the p-type layer is depleted is higher than a drain voltage at which a speed of electrons is saturated for thereby shielding traps while suppressing a drain parasitic capacitance and a short channel effect.