The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Aug. 29, 2001
Yasuo Ohno, Tokyo, JP;
Nobuyuki Hayama, Tokyo, JP;
Kensuke Kasahara, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Yuji Takahashi, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Kohji Matsunaga, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An object of the present invention is to improve, in a group III nitride semiconductor device, the productivity, heat radiation characteristic and performance in the element high speed operation; upon a sapphire substrate in which an A plane (an (11-20) plane) is set to be the basal plane, an epitaxial growth layer of a group III nitride semiconductor is formed and, thereon, a gate electrode a source electrode and a drain electrode are formed; these electrodes are disposed in such a way that a direction along which they are laid makes an angle within 20° with respect to a C axis of sapphire.