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For the Inventor, By the Inventor

Tokyo, Japan

Kohji Matsunaga

This inventor holds 6 USPTO granted patents. Top assignee: Nec Corporation. Active years: 2000-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kohji Matsunaga. Retrieved from https://idiyas.com/inventor/kohji-matsunaga

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6

% Patents Active = 50.0

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 122(Granted Patents)


Location History:

  • Minato-ku, JP (2004)
  • Tokyo, JP (2000 - 2011)

Company Filing History:

goldMedal6 out of 36,684 
 
Nec Corporation
 patents

Years Active: 2000-2011

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6 patents (USPTO):Explore Patents
1. 7863648 - Field effect transistor (2011-01-04),
2. 7800131 - Field effect transistor (2010-09-21),
3. 7518468 - Power divider-combiner circuit (2009-04-14),
4. 6765241 - Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances (2004-07-20),
5. 6441391 - Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate (2002-08-27),
6. 6166604 - Semiconductor amplifier with compensated passing gain characteristic and (2000-12-26),

Title: Inventor Spotlight: Kohji Matsunaga of Tokyo

Introduction

Kohji Matsunaga is a distinguished inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With a total of six patents to his name, Matsunaga has been instrumental in advancing the performance of field effect transistors, which play a critical role in modern electronic devices.

Latest Patents

Matsunaga's latest patents include innovative designs for field effect transistors that demonstrate exceptional capabilities in high voltage operations and high-frequency applications. One of his notable inventions features a field effect transistor with a first and second field plate electrode. The design incorporates a shielding part situated between the first field plate electrode and a drain electrode, effectively protecting the first field plate electrode from potential interference caused by the drain electrode. The patents emphasize the relationship between the overlap region of the second field plate electrode and the gate length, ensuring the device's efficiency across various applications.

Career Highlights

Currently, Kohji Matsunaga is employed at NEC Corporation, where he collaborates with a talented team of engineers and researchers to push the boundaries of semiconductor technology. His dedication to innovation has resulted in several high-impact patents, contributing to NEC's reputation as a leader in the electronics industry.

Collaborations

Throughout his career, Matsunaga has worked alongside esteemed colleagues, including Kensuke Kasahara and Tatsuo Nakayama. Together, they have explored new avenues in semiconductor design, demonstrating the power of collaboration in driving technological advancements.

Conclusion

Kohji Matsunaga's work in the realm of field effect transistors reflects his commitment to innovation and excellence. With a robust patent portfolio and a fruitful career at NEC Corporation, he continues to make substantial contributions to the field of semiconductor technology, influencing the future of electronics in Japan and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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