The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2000

Filed:

Jun. 15, 1999
Applicant:
Inventor:

Kohji Matsunaga, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ; H03F / ;
U.S. Cl.
CPC ...
330277 ; 330302 ;
Abstract

A semiconductor amplifier with a compensated passing gain characteristic and passing phase characteristic is disclosed. Connected to an input to a non-linear amplifying element is a characteristic improving circuit comprising a passive circuit including a capacitor, a resistor, and an inductor, and an FET connected to the passive circuit and having its source and a drain both grounded. In the characteristic improving circuit, with an increase in the input level, a gate capacitance of the FET is increased to enhance the passing gain and reduce the passing phase. Such characteristics of the characteristic improving circuit compensate for the characteristics of the FET to improve a phase characteristic and a distortion characteristic of the non-linear amplifying element at an output level.


Find Patent Forward Citations

Matsunaga, Kohji. (2000). Semiconductor amplifier with compensated passing gain characteristic and (U.S. Patent No. 6166604). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6166604

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…