For the Inventor, By the Inventor

Enter inventor name

Tatsuo Nakayama

USPTO Granted Patents = 74 (Patent Applications = 3)

EPO Patents = 2

Average Co-Inventor Count = 3.8

ph-index = 13

Forward Citations = 622(Granted Patents)

Forward Citations (Not Self Cited) = 583(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Minato-ku, JP (2004 - 2015)
Kanagawa, JP (2014 - 2016)
Kawasaki, JP (2015 - 2018)
Hitachinaka, JP (2018)
Tokyo, JP (1997 - 2019)
Ibaraki, JP (2016 - 2019)

Company Filing History:

45 out of 7,529

Renesas Electronics Corporation

28 out of 35,734

Nec Corporation

Nec C Orporation

Years Active: 1997-2019

Loading Chart...

Loading Chart...

Areas of Expertise:

Semiconductor Device

Field Effect Transistor

Bipolar Transistor

Nitride Semiconductor

Heterojunction Field Effect Transistor

Multi-Layered Gate Dielectric

Schottky Barrier Diode

Epitaxial Film

Aluminum Gallium Nitride

Trench Structure

Reverse Blocking Characteristics

Gate Leakage Current

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10410868 - Semiconductor device and method of manufacturing semiconductor device (2019-09-10),

2. 10388779 - Semiconductor device and manufacturing method thereof (2019-08-20),

3. 10249715 - Semiconductor device and method of manufacturing the semiconductor device (2019-04-02),

4. 10243070 - Semiconductor device and method for manufacturing the same (2019-03-26),

5. 10199476 - Semiconductor device and manufacturing method of semiconductor device (2019-02-05),

6. 10134908 - Semiconductor device and manufacturing method thereof (2018-11-20),

7. 10109730 - Semiconductor device and manufacturing method thereof (2018-10-23),

8. 10084077 - Semiconductor device and method of manufacturing semiconductor device (2018-09-25),

9. 10050142 - Semiconductor device and a method for manufacturing a semiconductor device (2018-08-14),

10. 10014403 - Semiconductor device (2018-07-03),

11. 9985108 - Semiconductor device and method for manufacturing semiconductor device including Al electrode formed on AlxGa(1-x)N layer (2018-05-29),

12. 9984884 - Method of manufacturing semiconductor device with a multi-layered gate dielectric (2018-05-29),

13. 9978642 - III-V nitride semiconductor device having reduced contact resistance (2018-05-22),

14. 9954087 - Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor (2018-04-24),

15. 9837524 - Semiconductor device and method of manufacturing semiconductor device (2017-12-05),

Title: The Innovative Journey of Tatsuo Nakayama

Introduction: Tatsuo Nakayama, a pioneering inventor hailing from Tokyo, Japan, has made significant contributions to the world of technology and innovation.

Latest Patents: Tatsuo Nakayama holds several patents in the field of robotics and artificial intelligence, with his latest inventions focusing on advanced human-robot interaction systems.

Career Highlights: Throughout his illustrious career, Nakayama has been recognized for his groundbreaking work in developing cutting-edge technologies that have revolutionized the way we interact with robots in various industries.

Collaborations: Nakayama has collaborated with leading research institutions and tech companies to further enhance the capabilities of his inventions, showcasing his dedication to pushing the boundaries of innovation.

Conclusion: Tatsuo Nakayama's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a trailblazer in the world of robotics and artificial intelligence.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…