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For the Inventor, By the Inventor

Tokyo, Japan

Tatsuo Nakayama

This inventor holds 74 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Renesas Electronics Corporation, Nec Corporation, Nec C Orporation. Active years: 1997-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsuo Nakayama. Retrieved from https://idiyas.com/inventor/tatsuo-nakayama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74 

% Patents Active = 68.9


Average Co-Inventor Count = 3.8

ph-index = 13

Forward Citations = 626(Granted Patents)

Forward Citations (Not Self Cited) = 583(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Minato-ku, JP (2004 - 2015)
  • Kanagawa, JP (2014 - 2016)
  • Kawasaki, JP (2015 - 2018)
  • Hitachinaka, JP (2018)
  • Tokyo, JP (1997 - 2019)
  • Ibaraki, JP (2016 - 2019)

Company Filing History:

goldMedal45 out of 7,654 
 
Renesas Electronics Corporation
 patents
silverMedal28 out of 36,684 
 
Nec Corporation
 patents
bronzeMedal1 out of 196 
 
Nec C Orporation
 patents

Years Active: 1997-2019

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Field Effect Transistor
Nitride Semiconductor
Multi-Layered Gate
AlxGa(1-x)N
Contact Resistance
Epitaxial Film
Insulating Film
Controllable Threshold Voltage
Schottky Barrier Diode
74 patents (USPTO):Explore Patents
1. 10410868 - Semiconductor device and method of manufacturing semiconductor device (2019-09-10),
2. 10388779 - Semiconductor device and manufacturing method thereof (2019-08-20),
3. 10249715 - Semiconductor device and method of manufacturing the semiconductor device (2019-04-02),
4. 10243070 - Semiconductor device and method for manufacturing the same (2019-03-26),
5. 10199476 - Semiconductor device and manufacturing method of semiconductor device (2019-02-05),
6. 10134908 - Semiconductor device and manufacturing method thereof (2018-11-20),
7. 10109730 - Semiconductor device and manufacturing method thereof (2018-10-23),
8. 10084077 - Semiconductor device and method of manufacturing semiconductor device (2018-09-25),
9. 10050142 - Semiconductor device and a method for manufacturing a semiconductor device (2018-08-14),
10. 10014403 - Semiconductor device (2018-07-03),
11. 9985108 - Semiconductor device and method for manufacturing semiconductor device including Al electrode formed on AlxGa(1-x)N layer (2018-05-29),
12. 9984884 - Method of manufacturing semiconductor device with a multi-layered gate dielectric (2018-05-29),
13. 9978642 - III-V nitride semiconductor device having reduced contact resistance (2018-05-22),
14. 9954087 - Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor (2018-04-24),
15. 9837524 - Semiconductor device and method of manufacturing semiconductor device (2017-12-05),

Title: The Innovative Journey of Tatsuo Nakayama

Introduction: Tatsuo Nakayama, a pioneering inventor hailing from Tokyo, Japan, has made significant contributions to the world of technology and innovation.

Latest Patents: Tatsuo Nakayama holds several patents in the field of robotics and artificial intelligence, with his latest inventions focusing on advanced human-robot interaction systems.

Career Highlights: Throughout his illustrious career, Nakayama has been recognized for his groundbreaking work in developing cutting-edge technologies that have revolutionized the way we interact with robots in various industries.

Collaborations: Nakayama has collaborated with leading research institutions and tech companies to further enhance the capabilities of his inventions, showcasing his dedication to pushing the boundaries of innovation.

Conclusion: Tatsuo Nakayama's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a trailblazer in the world of robotics and artificial intelligence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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