The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Jan. 29, 2018
Renesas Electronics Corporation, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Hiroshi Kawaguchi, Tokyo, JP;
Toshiyuki Takewaki, Tokyo, JP;
Nobuhiro Nagura, Tokyo, JP;
Takayuki Nagai, Tokyo, JP;
Yoshinao Miura, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, a gate electrode placed in the trench over a gate insulating film, and a first electrode and a second electrode formed over the second nitride semiconductor layer on both sides of the gate electrode, respectively.