The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Jul. 14, 2014
Renesas Electronics Corporation, Kawasaki-shi, JP;
Tatsuo Nakayama, Kawasaki, JP;
Masaaki Kanazawa, Kawasaki, JP;
Yasuhiro Okamoto, Kawasaki, JP;
Takashi Inoue, Kawasaki, JP;
Hironobu Miyamoto, Kawasaki, JP;
Ryohei Nega, Kawasaki, JP;
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Abstract
An electrode comes in ohmic contact with an AlGaN layer. A semiconductor device SD has a nitride semiconductor layer GN, and an AlGaN layer AGN (hereinafter referred to as 'AlGaN layer AGN), and Al electrodes DE, SE. in the AlGaN layer AGN, 0<x≤0.2 is satisfied. Also, both of a concentration of a p-type impurity and a concentration of an n-type impurity in the AlGaN layer AGN are 1×10cmor lower. In this example, the p-type impurity is exemplified by, for example, Be, C, and Mg, and the n-type impurity is exemplified by Si, S, and Se. Also, the Al electrodes DE and SE are connected to the AlGaN layer AGN. Because a composition ratio of Al is limited to the above-mentioned range, the Al electrodes DE and SE are brought into ohmic contact with the AlGaN layer AGN.