The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Dec. 20, 2016
Renesas Electronics Corporation, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Hiroshi Kawaguchi, Tokyo, JP;
Toshiyuki Takewaki, Tokyo, JP;
Nobuhiro Nagura, Tokyo, JP;
Takayuki Nagai, Tokyo, JP;
Yoshinao Miura, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a first nitride semiconductor layer, forming thereover a second nitride semiconductor layer having a band gap wider than that of the first nitride semiconductor layer, and thereby forming a stacked body, etching the stacked body with a first film placed over the stacked body and including a first opening portion as a mask to form a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, causing an end portion of the first film to retreat from an end portion of the trench, forming a second film over the first film including the inside of the trench, and forming a gate electrode over the second film.