Tokyo, Japan

Masaaki Kuzuhara

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Nec Corporation, Nec C Orporation, Nec Compound Semiconductor Devices, Ltd.. Active years: 1992-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaaki Kuzuhara. Retrieved from https://idiyas.com/inventor/masaaki-kuzuhara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 70.8

Average Co-Inventor Count = 3.3

ph-index = 12

Forward Citations = 559(Granted Patents)


Location History:

  • Minato-ku, JP (2004)
  • Tokyo, JP (1992 - 2011)

Company Filing History:


Years Active: 1992-2011

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Areas of Expertise:
Field-Effect Transistor
Semiconductor Device
Nitride Electrode Structure
Schottky Junction Electrode
Hetero-Junction
Compound Semiconductor
Parasitic Capacitances
Two-Dimensional Electron Gas
Memory Device
Graded Bandgap
Non-Volatile
Intermediate Layer
24 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Masaaki Kuzuhara

Introduction: Masaaki Kuzuhara, based in Tokyo, Japan, is a prominent inventor known for his extensive contributions to the field of semiconductor technology. With a remarkable portfolio of 24 patents, Kuzuhara has made significant advancements that have enhanced the performance and capabilities of electronic devices.

Latest Patents: Among his latest innovations is a patent for a field-effect transistor featuring a group III nitride electrode structure. This invention includes a field plate portion that overhangs the drain side in a visored shape. The design incorporates a multilayered film comprising silicone nitride (SiN) and silicone oxide (SiO) films beneath the field plate portion, effectively covering the surface of an AlGaN electron supply layer.

Another significant patent from Kuzuhara details a semiconductor device designed to suppress current collapse while preventing dielectric breakdown voltage and gain reduction, thereby facilitating high-voltage operation with optimal output. This innovative structure involves multiple layers made from various GaN-based semiconductors, designed to enhance device efficiency and performance.

Career Highlights: Kuzuhara has held essential roles at major corporations, including NEC Corporation and NEC Compound Semiconductor Devices, Ltd. His work within these organizations has significantly influenced the semiconductor industry's direction, particularly in high-voltage applications.

Collaborations: Throughout his career, Kuzuhara has collaborated with esteemed colleagues such as Yuji Ando and Hironobu Miyamoto. Their combined efforts have led to breakthroughs that continue to shape the landscape of semiconductor technology.

Conclusion: Masaaki Kuzuhara's innovative work and numerous patents underscore his influence in the semiconductor realm. His developments not only advance the technology but also pave the way for future innovations in electronic devices, showcasing the critical role of inventors in shaping the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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