The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Aug. 26, 1999
Masashi Mizuta, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
Yasunobu Nashimoto, Tokyo, JP;
Kazunori Asano, Tokyo, JP;
Yosuke Miyoshi, Tokyo, JP;
Yasunori Mochizuki, Tokyo, JP;
NEC Compound Semiconductor Devices, Ltd., Kawasaki, JP;
Abstract
A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source electrode and the drain electrode and making a Schottky junction with the channel layer. The gate electrode is provided with an overhanging field plate section and between the field plate section and the channel layer, there is laid a dielectric film. When the relative permittivity and the film thickness of the dielectric film are denoted by ∈ and t (nm), respectively, the following condition is satisfied 5≦∈<8, and 100<t<350.