The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Feb. 28, 2005
Tatsuo Nakayama, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Koji Hataya, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Koji Hataya, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.