The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jun. 27, 2001
Kensuke Kasahara, Tokyo, JP;
Yasuo Ohno, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Kazuaki Kunihiro, Tokyo, JP;
Nobuyuki Hayama, Tokyo, JP;
Yuji Takahashi, Tokyo, JP;
Kouji Matsunaga, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device of the present invention comprises Al Ga N layer and Al Ga N layer having different Al contents as an electron supply layer on GaN layer 6 serving as an active layer. An area where Al Ga N layer is formed is used as a low resistance area, while an area where Al Ga N layer is formed is used as a high resistance area. As a result, a distribution of two-dimensional electrons serving as carriers is produced within a horizontal plane perpendicular to the thickness direction of the layers to form a desired device configuration. For example, when the configuration is applied to a transistor configuration, a channel concentration under a gate is reduced to improve withstand voltage between the gate and a drain, and at the same time, a channel concentration in source and drain areas is increased to realize low contact resistance.