The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Jun. 17, 2003
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Kensuke Kasahara, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Kensuke Kasahara, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Masaaki Kuzuhara, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A GaN semiconductor device with improved heat resistance of the Schottky junction electrode and excellent power performance and reliability is provided. In this semiconductor device having a Schottky gate electrodewhich is in contact with an AlGaN electron supplying layer, a gate electrodecomprises a laminated structure wherein a first metal layerformed of any of Ni, Pt and Pd, a second metal layerformed of any of Mo, Pt, W, Ti, Ta, MoSi, PtSi, WSi, TiSi, TaSi, MoN, WN, TiN and TaN, and a third metal layer formed of any of Au, Cu, Al and Pt. Since the second metal layer comprises a metal material having a high melting point, it works as a barrier to the interdiffusion between the first metal layer and the third metal layer, and the deterioration of the gate characteristics caused by high temperature operation is suppressed. Since the first metal layer contacting the AlGaN electron supplying layerhas a high work function, the Schottky barrier is high, and superior Schottky contact is obtained.