The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7256432 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 14, 2007

Filed:

Dec. 15, 2003
Applicants:

Yasuhiro Okamoto, Tokyo, JP;

Hironobu Miyamoto, Tokyo, JP;

Yuji Ando, Tokyo, JP;

Tatsuo Nakayama, Tokyo, JP;

Takashi Inoue, Tokyo, JP;

Masaaki Kuzuhara, Tokyo, JP;

Inventors:

Yasuhiro Okamoto, Tokyo, JP;

Hironobu Miyamoto, Tokyo, JP;

Yuji Ando, Tokyo, JP;

Tatsuo Nakayama, Tokyo, JP;

Takashi Inoue, Tokyo, JP;

Masaaki Kuzuhara, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electric-field control electrode () is formed between a gate electrode () and a drain electrode (). A multilayered film including a SiN film () and a SiOfilm () is formed below the electric-field control electrode (). The SiN film () is formed so that a surface of an AlGaN electron supply layer () is covered with the SiN film ().


Find Patent Forward Citations

Okamoto, Yasuhiro. (2007). Field-effect transistor (U.S. Patent No. 7256432). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7256432

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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