The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Dec. 04, 1998
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1119 ; H01L 2/358 ; H01L 2/710 ; H01L 2/9768 ; H01L 3/1117 ;
U.S. Cl.
CPC ...
H01L 3/1119 ; H01L 2/358 ; H01L 2/710 ; H01L 2/9768 ; H01L 3/1117 ;
Abstract
A compound semiconductor field effect transistor having, between a gate electrode and a drain electrode, a non-gate region which is the channel region not covered by the gate electrode, wherein a plurality of isolation regions are formed in the non-gate region in such a way that they extend in the direction of channel current and contact with the gate electrode. This compound semiconductor field effect transistor is improved in breakdown voltage between drain and gate and yet retains the high-speed operability of transistor.