The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Apr. 08, 1998
Yuji Takahashi, Tokyo, JP;
Yasuo Ohno, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of evaluating the surface/interface of a semiconductor device is disclosed. This method uses the semiconductor device in which an n-type source electrode and an n-type drain electrode are formed on both ends of the surface of an n-type conductive layer formed on a semiconductor substrate; and a gate electrode composed of a p-type ohmic electrode or an n-type Schottky electrode is formed on one end of the surface on which the source or drain electrode is not disposed. In this semiconductor device, voltage to be applied to the gate electrode is changed and a change of current flowing between the source electrode and the drain electrode in response to the voltage change is measured. Then the type of trap on the surface/interface of the semiconductor is determined from an amount of change in the value of the current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile