The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1999
Filed:
Sep. 10, 1998
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ; 257279 ; 257280 ;
Abstract
In a field effect transistor, a semiconductor channel layer is formed for carriers to run therein, and a first conductive semiconductor carrier supply layer is formed on the channel layer. Also, a second conductive semiconductor layer has a conductive type opposite to the carrier supply layer or contacts the gate electrode and is formed of same materials as the carrier supply layer. A third conductive semiconductor layer is formed on the layer having a conductive type opposite to the carrier supply layer or contacting the gate electrode and has the same conductive type of the carrier supply layer. A schottky gate electrode is formed in contact with the second conductive semiconductor layer.