The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Feb. 10, 1999
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/980 ; H01L 3/1112 ;
U.S. Cl.
CPC ...
H01L 2/980 ; H01L 3/1112 ;
Abstract
A high power FET has a first conductivity epitaxial layer overlying a semi-insulating substrate, a second conductivity epitaxial layer, a gate being in Schottky contact with the second conductivity layer, and source and drain regions being in ohmic contact with the second conductivity layer. Impurity concentration N2 and thickness D of the second conductivity layer are such that the following relationship holds:
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Kunihiro, Kazuaki. (2001). Field-effect transistor and method for manufacturing the field effect transistor (U.S. Patent No. 6278144). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6278144
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile