The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
May. 30, 1997
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ;
U.S. Cl.
CPC ...
H01L 3/1072 ;
Abstract
There are provided a compound semiconductor device having a semiconductor multilayered structure, and a method of manufacturing the same. The semiconductor multilayered structure consists of a first recess etching stopper formed on a conductive layer of a compound semiconductor, a first semiconductor layer formed on the first recess etching stopper layer, a second recess etching stopper layer formed on the first semiconductor layer, and a second semiconductor layer formed on the second recess etching stopper layer.