The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Nov. 13, 1996
Yasuo Ohno, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A field-effect transistor has a source region, a drain region, a gate electrode, and a low resistivity layer. The source and drain regions are of a first conductivity type and formed as surface regions of a semiconductor layer formed on one of an insulating substrate and a semi-insulating substrate. The gate electrode is formed on a channel region between the source region and the drain region. The low resistivity layer serving as a shield layer is disposed underneath and spaced apart from the source, drain and channel regions, and overlaps the source region with an overlap area being larger than an overlap area between the low resistivity layer and the drain region. The arrangement enables the prevention of noise margin reduction and erroneous operation.