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Austin, TX, United States of America

Sung-Taeg Kang

USPTO Granted Patents = 50 (Patent Applications = 5)

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 2.6

ph-index = 10

Forward Citations = 298(Granted Patents)

Forward Citations (Not Self Cited) = 253(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

47 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2009-2018

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Areas of Expertise:

Split Gate Memory Cell

Non-Volatile Memory

High-K Metal Gate

Nanocrystal Technology

Semiconductor Devices

Memory Cell Integration

Gate Dimension Control

Flash Memory Cells

Contact Landing Regions

Endurance Testing

Programming Methods

Erase Biasing

50 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10153349 - Methods and structures for a split gate memory cell structure (2018-12-11),

2. 9685339 - Scalable split gate memory cell array (2017-06-20),

3. 9590058 - Methods and structures for a split gate memory cell structure (2017-03-07),

4. 9397201 - Non-volatile memory (NVM) cell and a method of making (2016-07-19),

5. 9368499 - Method of forming different voltage devices with high-k metal gate (2016-06-14),

6. 9356106 - Method to form self-aligned high density nanocrystals (2016-05-31),

7. 9331092 - Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arrays (2016-05-03),

8. 9318568 - Integration of a non-volatile memory (NVM) cell and a logic transistor and method therefor (2016-04-19),

9. 9275864 - Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates (2016-03-01),

10. 9252246 - Integrated split gate non-volatile memory cell and logic device (2016-02-02),

11. 9219167 - Non-volatile memory (NVM) cell (2015-12-22),

12. 9165652 - Split-gate memory cells having select-gate sidewall metal silicide regions and related manufacturing methods (2015-10-20),

13. 9142566 - Method of forming different voltage devices with high-K metal gate (2015-09-22),

14. 9129855 - Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology (2015-09-08),

15. 9112047 - Split gate non-volatile memory (NVM) cell and method therefor (2015-08-18),

Title: The Innovative Mind of Sung-Taeg Kang

Introduction: Sung-Taeg Kang is a visionary inventor based in Austin, Texas, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sung-Taeg Kang holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Kang has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Sung-Taeg Kang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Sung-Taeg Kang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the world of inventions. His work continues to inspire and shape the future of technological advancements globally.

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