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For the Inventor, By the Inventor

Austin, TX, United States of America

Sung-Taeg Kang

This inventor holds 50 USPTO granted patents and 5 published patent applications and 1 EPO patent, primarily in Non-Volatile Memory (CPC class H01L). Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc.. Active years: 2009-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung-Taeg Kang. Retrieved from https://idiyas.com/inventor/sung-taeg-kang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 50 

% Patents Active = 66.0

 

Average Co-Inventor Count = 2.6

ph-index = 11

Forward Citations = 299(Granted Patents)

Forward Citations (Not Self Cited) = 253(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal47 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal3 out of 2,856 
 
Nxp USA, Inc.
 patents

Years Active: 2009-2018

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Areas of Expertise:
Non-Volatile Memory
Split Gate
High-K Metal Gate
Memory Cell
Transistor Integration
Nanocrystals
Endurance
Contact Landing Regions
Flash Cell
Device Manufacturing
Voltage Devices
Gate Dimension Control
50 patents (USPTO):Explore Patents
1. 10153349 - Methods and structures for a split gate memory cell structure (2018-12-11),
2. 9685339 - Scalable split gate memory cell array (2017-06-20),
3. 9590058 - Methods and structures for a split gate memory cell structure (2017-03-07),
4. 9397201 - Non-volatile memory (NVM) cell and a method of making (2016-07-19),
5. 9368499 - Method of forming different voltage devices with high-k metal gate (2016-06-14),
6. 9356106 - Method to form self-aligned high density nanocrystals (2016-05-31),
7. 9331092 - Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arrays (2016-05-03),
8. 9318568 - Integration of a non-volatile memory (NVM) cell and a logic transistor and method therefor (2016-04-19),
9. 9275864 - Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates (2016-03-01),
10. 9252246 - Integrated split gate non-volatile memory cell and logic device (2016-02-02),
11. 9219167 - Non-volatile memory (NVM) cell (2015-12-22),
12. 9165652 - Split-gate memory cells having select-gate sidewall metal silicide regions and related manufacturing methods (2015-10-20),
13. 9142566 - Method of forming different voltage devices with high-K metal gate (2015-09-22),
14. 9129855 - Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology (2015-09-08),
15. 9112047 - Split gate non-volatile memory (NVM) cell and method therefor (2015-08-18),

Title: The Innovative Mind of Sung-Taeg Kang

Introduction: Sung-Taeg Kang is a visionary inventor based in Austin, Texas, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sung-Taeg Kang holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Kang has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Sung-Taeg Kang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Sung-Taeg Kang's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the world of inventions. His work continues to inspire and shape the future of technological advancements globally.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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