The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Sep. 04, 2014
Applicants:
Euhngi Lee, Austin, TX (US);
Sung-taeg Kang, Austin, TX (US);
Inventors:
Euhngi Lee, Austin, TX (US);
Sung-Taeg Kang, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42348 (2013.01); H01L 21/02532 (2013.01); H01L 21/28282 (2013.01); H01L 21/308 (2013.01); H01L 21/324 (2013.01); H01L 29/42344 (2013.01); H01L 29/792 (2013.01);
Abstract
Methods for fabricating dense arrays of electrically conductive nanocrystals that are self-aligned in depressions at target locations on a substrate, and semiconductor devices configured with nanocrystals situated within a gate stack as a charge storage area for a nonvolatile memory (NVM) device, are provided.