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For the Inventor, By the Inventor

Jhubei, Taiwan

Ru-Shang Hsiao

USPTO Granted Patents = 74 

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 130(Granted Patents)

Forward Citations (Not Self Cited) = 117(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchu, TW (2022 - 2023)
  • Jhubei, TW (2010 - 2024)
  • Hsinchu County, TW (2015 - 2024)

Company Filing History:

goldMedal74 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2010-2025

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74 patents (USPTO):
1. 12389625 - Semiconductor device with gate (2025-08-12),
2. 12349383 - Isolation structures in semiconductor devices (2025-07-01),
3. 12342553 - Semiconductor devices and methods for increased capacitance (2025-06-24),
4. 12336199 - Semiconductor devices and methods for increased capacitance (2025-06-17),
5. 12324230 - Semiconductor device and method (2025-06-03),
6. 12283595 - Integration of multiple transistors having fin and mesa structures (2025-04-21),
7. 12224213 - High voltage device (2025-02-11),
8. 12218134 - Semiconductor device and method (2025-02-04),
9. 12199193 - FinFET MOS capacitor (2025-01-14),
10. 12176347 - Input/output devices (2024-12-24),
11. 12159921 - Semiconductor device and method of manufacturing the same (2024-12-03),
12. 12119265 - High voltage devices (2024-10-15),
13. 12113120 - Gate electrode having a work-function layer including materials with different average grain sizes (2024-10-08),
14. 12094874 - Semiconductor devices and methods of manufacturing thereof (2024-09-17),
15. 12027609 - Gate structure of semiconductor device and method of forming same (2024-07-02),

Title: The Innovative Journey of Ru-Shang Hsiao

Introduction: Ru-Shang Hsiao, a talented inventor hailing from Jhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Ru-Shang Hsiao holds several patents in the areas of electronics and telecommunications, showcasing his continuous dedication to innovation and creativity.

Career Highlights: Throughout his illustrious career, Ru-Shang Hsiao has been recognized for his pioneering work in developing cutting-edge technologies that have revolutionized the industry. His commitment to pushing the boundaries of what is possible has led to numerous breakthroughs.

Collaborations: Ru-Shang Hsiao has collaborated with leading tech companies and research institutions to further his inventions and bring them to the market. His ability to work effectively in teams has been instrumental in the success of many projects.

Conclusion: In conclusion, Ru-Shang Hsiao stands as a visionary inventor whose passion for innovation has left an indelible mark on the world of technology. His relentless pursuit of excellence continues to inspire future generations of inventors and innovators.

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