The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
May. 06, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Jian-Shian Chen, Hsinchu, TW;
Ru-Shang Hsiao, Jhubei, TW;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0243 (2025.01); H10D 64/017 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01);
Abstract
A semiconductor device with different isolation structures and a method of fabricating the same are disclosed. The a method includes forming first and second fin structures on a substrate, forming a dummy fin structure on the substrate and between the first and second fin structures, forming a polysilicon structure on the dummy fin structure, forming source/drain regions on the first and second fin structures, and replacing the polysilicon structure with a dummy gate structure. A top portion of the dummy gate structure is formed wider than a bottom portion of the dummy gate structure.