The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Mar. 02, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jung-Chi Jeng, Tainan, TW;

I-Chih Chen, Tainan, TW;

Wen-Chang Kuo, Tainan, TW;

Ying-Hao Chen, Tainan, TW;

Ru-Shang Hsiao, Jhubei, TW;

Chih-Mu Huang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/60 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/601 (2025.01); H10D 30/0227 (2025.01); H10D 62/115 (2025.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. The semiconductor device includes an isolation structure in the semiconductor substrate. The isolation structure surrounds an active region of the semiconductor substrate. The semiconductor device includes a gate over the semiconductor substrate. The gate is across the active region and extends onto the isolation structure. The semiconductor device includes a support film over the isolation structure. The support film is a continuous film which continuously covers the isolation structure and the gate over the isolation structure.


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