Chih-Mu Huang

This inventor holds 55 USPTO granted patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC Nanjing Company, Limited. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chih-Mu Huang. Retrieved from https://idiyas.com/inventor/chih-mu-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 55

% Patents Active = 89.1

Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 79(Granted Patents)

Forward Citations (Not Self Cited) = 57(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsin-Chu, TW (2006 - 2008)
Taipei, TW (2017)
Tainan, TW (2014 - 2024)

Company Filing History:

55 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 113

TSMC Nanjing Company, Limited

patents

where one patent can have more than one assignee

Years Active: 2006-2026

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Areas of Expertise:

Semiconductor Device

FinFET Structure

Gate Manufacturing

Integrated Circuitry

Barrier Layer

EPI Channel

Support Structure

Fabrication Method

Hydrogen Plasma Treatment

Device Enhancement

Critical Dimension Control

Image Sensors

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12563826 - Semiconductor device and manufacturing method thereof (2026-02-24),

2. 12389625 - Semiconductor device with gate (2025-08-12),

3. 12159921 - Semiconductor device and method of manufacturing the same (2024-12-03),

4. 11955484 - Semiconductor device and manufacturing method thereof (2024-04-09),

5. 11600727 - Method of forming semiconductor device with gate (2023-03-07),

6. 11437495 - Semiconductor device and method of manufacturing the same (2022-09-06),

7. 11404413 - Semiconductor device and manufacturing method thereof (2022-08-02),

8. 11271111 - Source/drain structure with barrier in FinFET device and method for forming the same (2022-03-08),

9. 11271102 - Semiconductor structure (2022-03-08),

10. 11177306 - Support structure for integrated circuitry (2021-11-16),

11. 11145760 - Structure having improved fin critical dimension control (2021-10-12),

12. 10903336 - Semiconductor device and method of manufacturing the same (2021-01-26),

13. 10680103 - Method of forming semiconductor device with gate (2020-06-09),

14. 10651041 - Semiconductor structure and manufacturing method thereof (2020-05-12),

15. 10608094 - Semiconductor device and method of forming the same (2020-03-31),

Title: Chih-Mu Huang: Pioneering Inventor from Tainan

Introduction: Chih-Mu Huang is a highly respected inventor hailing from Tainan, Taiwan. His innovative spirit and dedication to technological advancements have made him a prominent figure in the world of patents and inventions.

Latest Patents: Chih-Mu Huang's latest patents focus on renewable energy solutions and sustainable technologies, showcasing his commitment to creating a greener future for the world.

Career Highlights: With a career spanning over two decades, Chih-Mu Huang has been instrumental in developing cutting-edge technologies in the fields of electronics, renewable energy, and healthcare. His contributions have significantly impacted various industries and improved the quality of life for many.

Collaborations: Throughout his career, Chih-Mu Huang has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work across disciplines and sectors has led to groundbreaking innovations with far-reaching implications.

Conclusion: Chih-Mu Huang's passion for innovation and his relentless pursuit of excellence have established him as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]