The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jun. 03, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Ru-Shang Hsiao, Hsinchu County, TW;

Chi-Cherng Jeng, Tainan, TW;

Chih-Mu Huang, Tainan, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28114 (2013.01); H01L 21/28247 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor structure and a method of forming the same are provided. According to an aspect of the disclosure, a semiconductor structure includes a first layer having a bottom portion and a sidewall connected to the bottom portion, a metal layer disposed above the bottom portion of the first layer, and a second layer disposed above the metal layer and laterally surrounded by the sidewall of the first layer. The metal layer includes a periphery and a middle portion surrounded by the periphery, the middle portion being thicker than the periphery, and a first etch rate of an etchant with respect to the metal layer is uniform throughout the metal layer and is greater than a second etch rate of the etchant with respect to the second layer.


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