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Chi-Cherng Jeng

This inventor holds 116 USPTO granted patents, primarily in Semiconductor Devices (CPC class H01L27-14627). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2013-2025.

USPTO Granted Patents = 116

% Patents Active = 84.5

Average Co-Inventor Count = 4.5

ph-index = 6

Forward Citations = 212(Granted Patents)

Forward Citations (Not Self Cited) = 193(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Tainan County, TW (2013 - 2016)
Tainan, JP (2016)
Madou Township, Tainan County, TW (2017)
Madou Township, TW (2014 - 2019)
Tainan City, CA (US) (2019)
Tainan, TW (2015 - 2024)

Company Filing History:

116 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2013-2025

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Areas of Expertise:

FinFET

Image Sensor

Epitaxial Control

Transistor

Semiconductor Fabrication

Barrier Layer

Gate Structure

Integrated Circuitry

Conductive Line

Tantalum Nitride

Field Effect Transistor

Planar Transistor

116 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12288798 - Backside illuminated image sensor device with shielding layer and forming method (2025-04-29),

2. 12087643 - Structure and formation method of fin-like field effect transistor (2024-09-10),

3. 12009262 - Semiconductor device having planar transistor and FinFET (2024-06-11),

4. 11949014 - Fin field effect transistor (FinFet) device structure and method for forming the same (2024-04-02),

5. 11810939 - Method of forming backside illuminated image sensor device with shielding layer (2023-11-07),

6. 11626435 - Image sensor (2023-04-11),

7. 11532728 - Method semiconductor device fabrication with improved epitaxial source/drain proximity control (2022-12-20),

8. 11393727 - Structure and formation method of fin-like field effect transistor (2022-07-19),

9. 11335721 - Backside illuminated image sensor device with shielding layer (2022-05-17),

10. 11328958 - Semiconductor device having planar transistor and FinFET (2022-05-10),

11. 11309423 - Fin field effect transistor (finFET) device structure and method for forming the same (2022-04-19),

12. 11271102 - Semiconductor structure (2022-03-08),

13. 11227886 - Mechanisms for forming image sensor device (2022-01-18),

14. 11177306 - Support structure for integrated circuitry (2021-11-16),

15. 11121166 - Image sensor device (2021-09-14),

Title: Chi-Cherng Jeng - Innovator from Tainan, TW

Introduction: Chi-Cherng Jeng is a renowned inventor hailing from Tainan, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chi-Cherng Jeng holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Chi-Cherng Jeng has worked with leading tech companies and research institutions, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Chi-Cherng Jeng has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Chi-Cherng Jeng's passion for innovation, coupled with his technical expertise, has solidified his position as a trailblazer in the world of technology, inspiring the next generation of inventors to push the boundaries of what is possible.

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