The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Oct. 23, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Barn Chen, Tainan, TW;
Ting-Huang Kuo, Tainan, TW;
Shiu-Ko Jangjian, Tainan, TW;
Chi-Cherng Jeng, Tainan, TW;
Kuang-Yao Lo, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes first and second transistors and first and second isolation structures. The first transistor includes a raised structure, a first gate structure over the raised structure, and a first source/drain structure over the raised structure and adjacent the first gate structure. The first isolation structure surrounds the raised structure and the first source/drain structure of the first transistor. A bottommost surface of the first source/drain structure is spaced apart from a topmost surface of the first isolation structure. The second transistor includes a fin structure, a second gate structure over the raised structure, and a second source/drain structure over the fin structure. The second isolation structure surrounds a bottom of the fin structure of the second transistor. A bottommost surface of the second source/drain structure is in contact with a topmost surface of the second isolation structure.